10-second intro
to Mexperts:
MEXPERTS – the MEdia EXPERTs for your B2B/B2C communications! Since 1993, our PR and multimedia agency has been successfully serving as a liaison between innovative high-tech companies on one hand and the trade, general, and business press on the other. Our experienced team has both a technical and journalistic background and is committed to helping you succeed by employing creative ideas, an outstanding network of contacts, novel technologies and the latest communication channels.
Mexperts in
a tag cloud:
Agency Profile Team Network Public relations Traditional PR tools Press releases Feature articles Interviews Guest editorials Round-tables Press Tours Press conferences Graphics design Contact management News distribution press contact database E-newsletter for the press Ad-hoc news services Online Press portal Measuring success Press review Online monitoring New media Online Corporate Websites Event Websites Weblications Videos & Multimedia online presentations Newsrooms Video Corporate videos Documentation Interviews Product demos Events Offline CD production Advertising Online & offline Industries & sectors Electronics IT Communication technology Mechanical engineering Automation industries Medical & biotechnology Transportation & logistics renewable energies Environmental technology References Our clients Projects Opinions
What clients and journalists say about us
"Available all the time, fast and reliable: Exactly the flexibility and customer orientation that we need in our global business!"
Annette Schmid-Heizer
EPCOS AG, Corporate Center, Business & Internal Communications
News currently running through our ticker
Munich, Germany – 15 July 2026 – Infineon Technologies AG (FSE: IFX / OTCQX: IFNNY) introduces the RIC70115, a radiation-hardened (rad hard) gallium nitride (GaN) high-electron mobility transistor (HEMT) driver designed for satellite and high-reliability space applications where power conversion performance and long-term operational integrity are critical requirements. The RIC70115 supports both silicon (Si) and GaN MOSFET designs in low-side and high-side configurations, giving power system designers greater flexibility to adopt GaN-based power architectures in space platforms without compromising safe operation across varying bias voltage conditions. As the New Space economy continues to scale and satellite constellations grow in complexity and number, demand for rad hard power components that support the transition from silicon to GaN is increasing.
Infineon and LS ELECTRIC collaborate to advance high-efficiency direct current power solutions for AI data centers
– Collaboration focuses on power conversion systems for energy storage, solid-state transformers and solid-state circuit breakers – Infineon's semiconductors help enhance efficiency, performance and reliability of DC power infrastructure systems Seoul, Korea – 13 July 2026 – Infineon Technologies AG (FSE: IFX / OTCQX: IFNNY) and LS ELECTRIC have signed a Memorandum of Understanding (MoU) to collaborate on high-efficiency direct current (DC) power infrastructure solutions for AI data centers and next-generation power grids.
ROHM Launches 600V Super Junction MOSFETs in Surface-Mount Package with High Thermal Performance
Willich-Münchheide, Germany, July 09, 2026 – ROHM has developed a new lineup of 600V Super Junction MOSFETs, the R60xxXNx and R60xxWNx series.
Legal Notice | Privacy | Disclaimer