10-second intro
to Mexperts:

MEXPERTS – the MEdia EXPERTs for your B2B/B2C communications! Since 1993, our PR and multimedia agency has been successfully serving as a liaison between innovative high-tech companies on one hand and the trade, general, and business press on the other. Our experienced team has both a technical and journalistic background and is committed to helping you succeed by employing creative ideas, an outstanding network of contacts, novel technologies and the latest communication channels.

What clients and journalists say about us

"Tips from journalists in the electronics industry first called our attention to Mexperts. In the meantime, we have grown to appreciate their service and the uncomplicated, pragmatic collaboration with the Mexperts during a period covering more than five years now. The agency provides top support for our European PR tasks. The combination of their technical expertise with their access to all editorial levels of the publications that are relevant for us and their professional style of working is unique in Europe!"

Carsten Elgert
Mentor Graphics, European Marketing Director

News currently running through our ticker



New Buck-Boost DC-DC Eval Board for Ultra-Compact Mounting
Willich-Münchheide, Germany, July 22, 2026 – ROHM has developed a new evaluation board, the BD83070GWL-EVK-002. It is designed to fully demonstrate the features of the BD83070GWL DC-DC converter IC, which combines high efficiency with ultra-low current consumption.

Infineon introduces RIC70115 radiation-hardened GaN HEMT driver for satellite and high-reliability space applications
Munich, Germany – 15 July 2026 – Infineon Technologies AG (FSE: IFX / OTCQX: IFNNY) introduces the RIC70115, a radiation-hardened (rad hard) gallium nitride (GaN) high-electron mobility transistor (HEMT) driver designed for satellite and high-reliability space applications where power conversion performance and long-term operational integrity are critical requirements. The RIC70115 supports both silicon (Si) and GaN MOSFET designs in low-side and high-side configurations, giving power system designers greater flexibility to adopt GaN-based power architectures in space platforms without compromising safe operation across varying bias voltage conditions. As the New Space economy continues to scale and satellite constellations grow in complexity and number, demand for rad hard power components that support the transition from silicon to GaN is increasing.

Infineon and LS ELECTRIC collaborate to advance high-efficiency direct current power solutions for AI data centers  
–    Collaboration focuses on power conversion systems for energy storage, solid-state transformers and solid-state circuit breakers –    Infineon's semiconductors help enhance efficiency, performance and reliability of DC power infrastructure systems Seoul, Korea – 13 July 2026 – Infineon Technologies AG (FSE: IFX / OTCQX: IFNNY) and LS ELECTRIC have signed a Memorandum of Understanding (MoU) to collaborate on high-efficiency direct current (DC) power infrastructure solutions for AI data centers and next-generation power grids.



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